FDMC86102

FDMC86102 datasheet

Маркировка

FDMC86102
Производитель

Fairchild Semiconductor
Описание

Fairchild Semiconductor FDMC86102 Configuration: Single Continuous Drain Current: 20 A Current - Continuous Drain (id) @ 25?° C: 7A Drain To Source Voltage (vdss): 100V Drain-source Breakdown Voltage: 100 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Forward Transconductance Gfs (max / Min): 19 S Gate Charge (qg) @ Vgs: 18nC @ 10V Gate-source Breakdown Voltage: +/- 20 V Input Capacitance (ciss) @ Vds: 965pF @ 50V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: 8-MLP, Power33 Power - Max: 2.3W Power Dissipation: 41 W Rds On (max) @ Id, Vgs: 24 mOhm @ 7A, 10V Resistance Drain-source Rds (on): 32.8 mOhms Series: PowerTrench?® Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 250?µA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 100 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 32.8 mOhms Fall Time: 4 ns Forward Transconductance gFS (Max / Min): 19 S Rise Time: 4 ns Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 14 ns
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